Semiconductor laser device

ABSTRACT

A semiconductor laser device includes a semiconductor laser element, a base material supporting the semiconductor laser element, and a wiring portion formed on the base material and constituting a conduction path to the semiconductor laser element. The base material includes a mounting face oriented to one side in a thickness direction of the base material and having the semiconductor laser element mounted thereon, while also including an emission part located on one side with respect to the semiconductor laser element in a first direction perpendicular to the thickness direction. Light from the semiconductor laser element is emitted through the emission part to the outside.

TECHNICAL FIELD

The present disclosure relates to a semiconductor laser device.

BACKGROUND ART

Semiconductor laser devices are widely utilized as a light source devicefor various types of electronic devices. For example, JP-A-2017-147301discloses an example of existing semiconductor laser device. Thesemiconductor laser device disclosed in this document includes adisk-shaped base portion, and a heatsink portion provided on the upperface of the base portion. A semiconductor laser element is mounted onthe heatsink portion. Two leads are sticking out from the lower face ofthe base portion. This semiconductor laser device is mounted on acircuit board, with each of the leads passed through a hole formed inthe circuit board.

PRIOR ART DOCUMENT Patent Literature

Patent Literature 1: JP-A-2017-147301

SUMMARY OF THE INVENTION Problems to be Solved by the Invention

Apart from the foregoing semiconductor laser device, there are caseswhere a semiconductor laser device designed for surface mounting isrequired, depending on the type of the electronic device.

In light of the above, an object of the present disclosure is to proposea semiconductor laser device that can be surface-mounted.

Means for Solving the Problem

According to an aspect of the present disclosure, there is provided asemiconductor laser device including: a semiconductor laser element; abase material supporting the semiconductor laser element; and a wiringportion formed on the base material and constituting a conduction pathto the semiconductor laser element. The base material includes: amounting face oriented to one side in a thickness direction of the basematerial and having the semiconductor laser element mounted thereon; andan emission part located on one side with respect to the semiconductorlaser element in a first direction perpendicular to the thicknessdirection. It is arranged that light from the semiconductor laserelement is emitted out through the emission part.

Advantage of the Invention

The semiconductor laser device according to the present disclosure canbe surface-mounted.

Other features and advantages of the present disclosure will become moreapparent, through the description given below with reference to theaccompanying drawings.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a plan view showing a semiconductor laser device according toa first embodiment.

FIG. 2 is a front view showing the semiconductor laser device accordingto the first embodiment.

FIG. 3 is a side view showing the semiconductor laser device accordingto the first embodiment.

FIG. 4 is a bottom view showing the semiconductor laser device accordingto the first embodiment.

FIG. 5 is a cross-sectional view taken along a line V-V in FIG. 1 .

FIG. 6 is an enlarged cross-sectional view showing a part of thesemiconductor laser device according to the first embodiment.

FIG. 7 is a cross-sectional view taken along a line VII-VII in FIG. 1 .

FIG. 8 is a plan view showing a base material of the semiconductor laserdevice according to the first embodiment.

FIG. 9 is a plan view showing the base material of the semiconductorlaser device according to the first embodiment.

FIG. 10 is a plan view showing the base material of the semiconductorlaser device according to the first embodiment.

FIG. 11 is an enlarged cross-sectional view for explaining a firstvariation of the semiconductor laser device according to the firstembodiment.

FIG. 12 is an enlarged cross-sectional view for explaining a secondvariation of the semiconductor laser device according to the firstembodiment.

FIG. 13 is a cross-sectional view for explaining a third variation ofthe semiconductor laser device according to the first embodiment.

FIG. 14 is a cross-sectional view for explaining a fourth variation ofthe semiconductor laser device according to the first embodiment.

FIG. 15 is a cross-sectional view for explaining a fifth variation ofthe semiconductor laser device according to the first embodiment.

FIG. 16 is a plan view showing a sixth variation of the semiconductorlaser device according to the first embodiment.

FIG. 17 is a cross-sectional view taken along a line XVII-XVII in FIG.16 .

FIG. 18 is a plan view showing a semiconductor laser device according toa second embodiment.

FIG. 19 is a plan view for explaining a base material of thesemiconductor laser device according to the second embodiment.

FIG. 20 is a plan view for explaining the base material of thesemiconductor laser device according to the second embodiment.

FIG. 21 is a plan view showing a semiconductor laser device according toa third embodiment.

FIG. 22 is a side view showing the semiconductor laser device accordingto the third embodiment.

FIG. 23 is a bottom view showing the semiconductor laser deviceaccording to the third embodiment.

FIG. 24 is a cross-sectional view taken along a line XXIV-XXIV in FIG.21 .

FIG. 25 is a plan view for explaining a base material of thesemiconductor laser device according to the third embodiment.

FIG. 26 is a plan view for explaining the base material of thesemiconductor laser device according to the third embodiment.

FIG. 27 is a plan view for explaining the base material of thesemiconductor laser device according to the third embodiment.

FIG. 28 is a cross-sectional view showing a first variation of thesemiconductor laser device according to the third embodiment.

FIG. 29 is a plan view showing a semiconductor laser device according toa fourth embodiment.

FIG. 30 is a bottom view showing the semiconductor laser deviceaccording to the fourth embodiment.

FIG. 31 is a cross-sectional view taken along a line XXXI-XXXI in FIG.29 .

FIG. 32 is a cross-sectional view taken along a line XXXII-XXXII in FIG.29 .

FIG. 33 is a plan view showing a semiconductor laser device according toa fifth embodiment.

FIG. 34 is a front view showing the semiconductor laser device accordingto the fifth embodiment.

FIG. 35 is a cross-sectional view taken along a line XXXV-XXXV in FIG.33 .

FIG. 36 is a plan view showing a semiconductor laser device according toa sixth embodiment.

FIG. 37 is a bottom view showing the semiconductor laser deviceaccording to the sixth embodiment.

FIG. 38 is a cross-sectional view taken along a line XXXVIII-XXXVIII inFIG. 36 .

FIG. 39 is a plan view showing a semiconductor laser device according toa seventh embodiment.

FIG. 40 is a bottom view showing the semiconductor laser deviceaccording to the seventh embodiment.

MODE FOR CARRYING OUT THE INVENTION

Hereafter, exemplary embodiments of the present disclosure will bedescribed in detail, with reference to the drawings.

FIG. 1 to FIG. 10 illustrate a semiconductor laser device A1 accordingto a first embodiment of the present disclosure. The semiconductor laserdevice A1 includes a base material 1, a wiring portion 5, asemiconductor laser element 6, a plurality of through wirings 69, afirst cover 7, and a second cover 8.

In the description given hereunder, a z-direction corresponds to athickness direction of the base material 1. An x-direction correspondsto a first direction, and a y-direction corresponds to a seconddirection. Referring to the z-direction, the upper side in the drawingcorresponds to “one side”, and the lower side corresponds to “the otherside”. Referring to the x-direction, a term “front side” may be used torepresent the one side, and a term “rear side” may be used to representthe other side. It should be noted, however, that the terms “one side”,“the other side”, “front”, and “rear” are used merely for the sake ofconvenience of the description, and in no way intended to limit theconfiguration of the semiconductor laser device according to the presentdisclosure.

The terms “first”, “second”, “third”, and so forth in the presentdisclosure are merely for the purpose of distinction of elements fromone another, and in no way intended to specify an order with respect tothe elements accompanied with these terms.

The base material 1 supports the semiconductor laser element 6. At leastthe surface of the base material 1 is formed of an insulative material.For example as shown in FIG. 1 to FIG. 5 , the base material 1 includesan obverse face 11, a reverse face 12, a front end face 13, a rear endface 14, a pair of side faces 15, an opening 17, an emission part 18, aplurality of rear grooves 161, a plurality of front grooves 163, and afront recess 171. The dimensions of the base material 1 are, forexample, approximately 2.0 mm to 7.0 mm in the x-direction,approximately 1.5 mm to 7.0 mm in the y-direction, and approximately 0.7mm to 2.5 mm in the z-direction. However, the size or shape of the isnot limited to such examples.

The obverse face 11 is oriented to one side (upper side) in thez-direction. In this embodiment, the obverse face 11 serves as amounting face. In the illustrated example, the obverse face 11 isperpendicular to the z-direction. The obverse face 11 is generallyrectangular.

The reverse face 12 is located on the opposite side of the obverse face11, and oriented to the other side (lower side) in the z-direction. Inthe illustrated example, the reverse face 12 is perpendicular to thez-direction. The reverse face 12 is generally rectangular.

The front end face 13 is oriented to one side (front side) in thex-direction, and continuous with the obverse face 11 and the reverseface 12. In the illustrated example, the front end face 13 isperpendicular to the x-direction.

The rear end face 14 is oriented to the other side (rear side) in thex-direction, and continuous with the obverse face 11 and the reverseface 12. In the illustrated example, the rear end face 14 isperpendicular to the x-direction.

The pair of side faces 15 are each continuous with the obverse face 11and the reverse face 12, and also with the front end face 13 and therear end face 14. The pair of side faces 15 are spaced from each otherin the y-direction. In the illustrated example, the side faces 15 areeach perpendicular to the y-direction, and generally rectangular.

The opening 17 opens the inner space defined by the base material 1 toone side (upper side) in the z-direction. In the illustrated example,the opening 17 is generally rectangular as viewed in the z-direction, inother words in a plan view (see FIG. 10 ). The opening 17 is biased toone side (front side) in the x-direction. Because of the presence of theopening 17, the obverse face 11 has an annular rectangular shape (closedframe shape), as viewed in the z-direction.

The emission part 18 may be a port for emitting therethrough the laserlight from the semiconductor laser element 6, to one side (front side)in the x-direction. In the illustrated example, the inner space definedby the base material 1 is opened toward one side (front side) in thex-direction, by the emission part 18. The emission part 18 is, forexample, rectangular as viewed in the x-direction (see FIG. 2 ). Becauseof the presence of the emission part 18, the front end face 13 has anannular rectangular shape, as viewed in the x-direction.

The plurality of rear grooves 161 are each recessed from the rear endface 14 (see FIG. 1 ), and extend in the z-direction (see FIG. 3 ). Therear grooves 161 each reach the obverse face (mounting face) 11. In theillustrated example, each of the rear grooves 161 also reaches thereverse face 12. Although the rear grooves 161 has a semicircularcross-sectional shape in the illustrated example, the present disclosureis not limited to such a configuration. The plurality of rear grooves161 are spaced from each other, in the y-direction.

As shown in FIG. 1 , the plurality of front grooves 163 are each formedat the boundary between one of the pair of side faces 15 and the frontend face 13. The front grooves 163 each extend in the z-direction, so asto reach the obverse face 11 and the reverse face 12. Although the reargrooves 161 each have a quarter-circular cross-sectional shape in theillustrated example, the present disclosure is not limited to such aconfiguration.

As shown in FIG. 2 and FIG. 5 , the front recess 171 is formed so as torecede to the other side (rear side) in the x-direction from the frontend face 13, and extend so as to surround the emission part 18. Thefront recess 171 has an annular rectangular shape, as viewed in thex-direction. The front recess 171 is used to attach the first cover 7.

As shown in FIG. 3 , the base material 1 includes a plurality of layers.In the illustrated example, the base material 1 includes a first layer2, a second layer 3, and a third layer 4. The first layer 2, the secondlayer 3, and the third layer 4 are stacked in the z-direction. Examplesof the material of the first layer 2, the second layer 3, and the thirdlayer 4 include, but are not limited to, a ceramic such as alumina oraluminum nitride. Here, each of the layers may be composed of aplurality of ceramic layers. In FIG. 2 , FIG. 3 , FIG. 5 , and FIG. 7 ,dash-dot lines indicate the boundaries between the ceramic layerslocated adjacent to each other.

The first layer 2 is the lowermost layer in the z-direction. The firstlayer 2 includes a first obverse face 21, a first reverse face 22, afirst front end face 23, a first rear end face 24, a pair of first sidefaces 25, a first main portion 210, a pair of first side frames 220, afirst front frame 230, a pedestal portion 240, a bottom portion 250, aplurality of first rear grooves 261, and a plurality of first frontgrooves 263.

The first obverse face 21 is oriented upward in the z-direction. In thisembodiment, the first obverse face 21 serves as a mounting face. In theillustrated example, the first obverse face 21 is perpendicular to thez-direction.

The first reverse face 22 is on the opposite side of the first obverseface 21, and oriented downward in the z-direction. In the illustratedexample, the first reverse face 22 is perpendicular to the z-direction.The first reverse face 22 constitutes the reverse face 12.

The first front end face 23 is oriented to one side (front side) in thex-direction, and continuous with the first obverse face 21 and the firstreverse face 22. In the illustrated example, the first front end face 23is perpendicular to the x-direction. The first front end face 23constitutes a part of the front end face 13.

The first rear end face 24 is oriented to the other side (rear side) inthe x-direction, and continuous with the first obverse face 21 and thefirst reverse face 22. In the illustrated example, the first rear endface 24 is perpendicular to the x-direction. The first rear end face 24constitutes a part of the rear end face 14.

The pair of first side faces 25 are each continuous with the firstobverse face 21 and the first reverse face 22, and also with the firstfront end face 23 and the first rear end face 24. The pair of first sidefaces 25 are each oriented in the y-direction. In the illustratedexample, the first side faces 25 are perpendicular to the y-direction.The first side faces 25 each constitute a part of the side face 15.

The first main portion 210 is a portion of the first layer 2 located onthe rear side in the x-direction. In the illustrated example, the firstmain portion 210 is generally rectangular, as viewed in the z-direction.The thickness of the first main portion 210 is equal to the maximumthickness of the first layer 2.

The pair of first side frames 220 extend to the front side in thex-direction, from the respective sides of the first main portion 210 inthe y-direction. The thickness of the first side frame 220 is equal tothe maximum thickness of the first layer 2.

The first front frame 230 is continuous with the respective end portionsof the pair of first side frames 220 on one side in the x-direction, andextends in the y-direction. The pair of first side frames 220 and thefirst front frame 230 constitute a frame-shaped portion. The first frontframe 230 includes a recess 231. The recess 231 corresponds to a portionof the first front frame 230 where the size thereof in the z-directionis reduced, and constitutes a part of the front recess 171.

The pedestal portion 240 extends to one side (front side) in thex-direction from the first main portion 210, and is generallyrectangular as viewed in the z-direction, in the illustrated example.The pedestal portion 240 is spaced from the pair of first side frames220 and the first front frame 230. On the pedestal portion 240, thesemiconductor laser element 6 is mounted.

The bottom portion 250 is located on the other side (lower side) in thez-direction, with respect to the first obverse face 21. The bottomportion 250 is located in a region surrounded by the pair of first sideframes 220, the first front frame 230, and the pedestal portion 240, asviewed in the z-direction. The bottom portion 250 is thinner than themaximum thickness of the first layer 2 in the z-direction.

The plurality of first rear grooves 261 are each recessed from the firstrear end face 24, and each extend in the z-direction. The first reargrooves 261 each reach the first obverse face 21 and the first reverseface 22. The cross-sectional shape of the first rear grooves 261 is notspecifically limited. In the illustrated example, the first rear grooves261 each have a semicircular cross-sectional shape. The plurality offirst rear grooves 261 are spaced from each other in the y-direction.The plurality of first rear grooves 261 each constitute a part of one ofthe plurality of rear grooves 161.

The plurality of first front grooves 263 are each formed at the boundarybetween one of the pair of first side faces 25 and the first front endface 23. The first front grooves 263 each extend in the z-direction, soas to reach the first obverse face 21 and the first reverse face 22. Thecross-sectional shape of the first front grooves 263 is not specificallylimited. In the illustrated example, the first front grooves 263 eachhave a quarter-circular cross-sectional shape. The plurality of firstfront grooves 263 each constitute a part of one of the plurality offront grooves 163.

The second layer 3 is stacked on one side (upper side) of the firstlayer 2 in the z-direction. The second layer 3 includes a second obverseface 31, a second reverse face 32, a second front end face 33, a secondrear end face 34, a pair of second side faces 35, an inner end face 36,a second main portion 310, a pair of second side frames 320, a pluralityof second rear grooves 361, and a plurality of second front grooves 363.

The second obverse face 31 is oriented to one side (upper side) in thez-direction. In the illustrated example, the second obverse face 31 isperpendicular to the z-direction.

The second reverse face 32 is oriented to the other side (lower side) inthe z-direction, opposite to the side to which the second obverse face31 is oriented, and opposed to the first obverse face 21 of the firstlayer 2. In the illustrated example, the second reverse face 32 isperpendicular to the z-direction.

The second front end face 33 is oriented to one side (front side) in thex-direction, and continuous with the second obverse face 31 and thesecond reverse face 32. In the illustrated example, the second front endface 33 is perpendicular to the x-direction. The second front end face33 constitutes a part of the front end face 13. The second front endface 33 includes two regions spaced from each other in the y-direction.

The second rear end face 34 is oriented to the other side (rear side) inthe x-direction, and continuous with the second obverse face 31 and thesecond reverse face 32. In the illustrated example, the second rear endface 34 is perpendicular to the x-direction. The second rear end face 34constitutes a part of the rear end face 14.

The pair of second side faces 35 are each continuous with the secondobverse face 31 and the second reverse face 32, and also with the secondfront end face 33 and the second rear end face 34. The pair of secondside faces 35 are each oriented in the y-direction. In the illustratedexample, the second side faces 35 are perpendicular to the y-direction.The second side faces 35 each constitute a part of the side face 15.

The second main portion 310 is a portion of the second layer 3 locatedon the other side (rear side) in the x-direction. In the illustratedexample, the second main portion 310 is generally rectangular, as viewedin the z-direction. The thickness of the second main portion 310 isequal to the maximum thickness of the second layer 3.

The inner end face 36 is located on one side (front side) of the secondmain portion 310 in the x-direction. The inner end face 36 is inclinedwith respect to the z-direction, so as to be shifted to one side (frontside, to the left in FIG. 6 ) in the x-direction, proceeding along fromone side (upper side in FIG. 6 ) toward the other side (lower side inFIG. 6 ) in the z-direction.

The pair of second side frames 320 extend to one side (front side) inthe x-direction, from the respective sides of the second main portion310 in the y-direction. The thickness of the second side frame 320 isequal to the maximum thickness of the second layer 3.

The pair of second side frames 320 each include a recess 321. The recess321 is formed so as to recede to the other side (rear side) in thex-direction, from the second front end face 33 of the second side frame320. The recess 321 is located on the inner side in the y-direction. Thepair of recesses 321 constitute a part of the front recess 171.

The plurality of second rear grooves 361 are each recessed from thesecond rear end face 34, and each extend in the z-direction. The secondrear grooves 361 each reach the second obverse face 31 and the secondreverse face 32. The cross-sectional shape of the second rear grooves361 is not specifically limited. In the illustrated example, the secondrear grooves 361 each have a semicircular cross-sectional shape. Theplurality of second rear grooves 361 are spaced from each other in they-direction. The plurality of second rear grooves 361 each constitute apart of one of the plurality of rear grooves 161.

The plurality of second front grooves 363 are each formed at theboundary between one of the pair of second side faces 35 and the secondfront end face 33. The second front grooves 363 each extend in thez-direction, so as to reach the second obverse face 31 and the secondreverse face 32. The cross-sectional shape of the second front grooves363 is not specifically limited. In the illustrated example, the secondfront grooves 363 each have a quarter-circular cross-sectional shape.The plurality of second front grooves 363 each constitute a part of oneof the plurality of front grooves 163.

The third layer 4 is the uppermost layer in the z-direction. The thirdlayer 4 is stacked on one side (upper side) of the second layer 3, inthe z-direction. The third layer 4 includes a third obverse face 41, athird reverse face 42, a third front end face 43, a third rear end face44, a pair of third side faces 45, a third main portion 410, a pair ofthird side frames 420, a third front frame 430, a plurality of thirdrear grooves 461, and a plurality of third front grooves 463.

The third obverse face 41 is oriented to one side (upper side) in thez-direction. In the illustrated example, the third obverse face 41 isperpendicular to the z-direction. In this embodiment, the third obverseface 41 constitutes the obverse face 11.

The third reverse face 42 is oriented to the other side (lower side) inthe z-direction, opposite to the side to which the third obverse face 41is oriented, and opposed to the second obverse face 31 of the secondlayer 3. In the illustrated example, the third reverse face 42 isperpendicular to the z-direction.

The third front end face 43 is oriented to one side (front side) in thex-direction, and continuous with the third obverse face 41 and the thirdreverse face 42. In the illustrated example, the third front end face 43is perpendicular to the x-direction. The third front end face 43constitutes a part of the front end face 13.

The third rear end face 44 is oriented to the other side (rear side) inthe x-direction, and continuous with the third obverse face 41 and thethird reverse face 42. In the illustrated example, the third rear endface 44 is perpendicular to the x-direction. The third rear end face 44constitutes a part of the rear end face 14.

The pair of third side faces 45 are each continuous with the thirdobverse face 41 and the third reverse face 42, and also with the thirdfront end face 43 and the third rear end face 44. The pair of third sidefaces 45 are each oriented in the y-direction. In the illustratedexample, the third side faces 45 are perpendicular to the y-direction.The third side faces 45 each constitute a part of the side face 15.

The third main portion 410 is a portion of the third layer 4 located onthe other side (rear side) in the x-direction. In the illustratedexample, the third main portion 410 is generally rectangular, as viewedin the z-direction. The thickness of the third main portion 410 is equalto the maximum thickness of the second layer 3.

The pair of third side frames 420 extend to one side (front side) in thex-direction, from the respective sides of the third main portion 410 inthe y-direction.

The third front frame 430 is continuous with the respective end portionsof the pair of third side frames 420, on one side in the x-direction,and extends in the y-direction. The pair of third side frames 420 andthe third front frame 430 constitute a frame-shaped portion. As shown inFIG. 5 , the third front frame 430 includes a recess 431. The recess 431is formed so as to recede to the other side (rear side) in thex-direction from the third front end face 43, and constitutes a part ofthe front recess 171.

The plurality of third rear grooves 461 are each recessed from the thirdrear end face 44, and each extend in the z-direction. The third reargrooves 461 each reach the third obverse face 41 and the third reverseface 42. The cross-sectional shape of the third rear grooves 461 is notspecifically limited. In the illustrated example, the third rear grooves461 each have a semicircular cross-sectional shape. The plurality ofthird rear grooves 461 are spaced from each other in the y-direction.The plurality of third rear grooves 461 each constitute a part of one ofthe plurality of rear grooves 161.

The plurality of third front grooves 463 are each formed at the boundarybetween one of the pair of third side faces 45 and the third front endface 43. The third front grooves 463 each extend in the z-direction, soas to reach the third obverse face 41 and the third reverse face 42. Thecross-sectional shape of the third front grooves 463 is not specificallylimited. In the illustrated example, the third front grooves 463 eachhave a quarter-circular cross-sectional shape. The plurality of thirdfront grooves 463 each constitute a part of one of the plurality offront grooves 163.

In this embodiment, the third layer 4 includes the opening 17, and alsothe annular recess 440. The annular recess 440 corresponds to theportion of the third layer 4 surrounding the opening 17, recessed to theother side (lower side) in the z-direction, from the third obverse face41 (obverse face 11). The annular recess 440 has an annular rectangularshape, as viewed in the z-direction. The annular recess 440 is used toattach the second cover 8.

The wiring portion 5 is formed on the base material 1, to constitute aconduction path to the semiconductor laser element 6. As shown in FIG. 1to FIG. 3 and FIG. 5 to FIG. 10 , the wiring portion 5 includes a firstwiring portion 51, a second wiring portion 52, a third wiring portion53, a plurality of rear communicating portions 501, and a plurality offront portions 505, in this embodiment. The wiring portion 5 is formedof a material having appropriate conductivity, for example by plating orpasting. Examples of the material of the wiring portion 5 include Cu,Ni, Ti, and Au. In a portion of the wiring portion 5 where solder is tobe applied, a surface layer formed of Sn may be provided.

The first wiring portion 51 is formed on the first layer 2 of the basematerial 1. In this embodiment, the first wiring portion 51 includes anelement mounting section 511, a first strip section 512, and a firstconnecting section 513.

The element mounting section 511 is formed on the first obverse face 21of the pedestal portion 240 of the first layer 2 in the base material 1.The element mounting section 511 is where the semiconductor laserelement 6 is to be mounted. In the illustrated example, the elementmounting section 511 is generally rectangular as viewed in thez-direction, and covers a majority of the pedestal portion 240.

The first strip section 512 is formed on the first main portion 210 ofthe first layer 2, so as to reach the lowermost one of the plurality offirst rear grooves 261 in the y-direction, in FIG. 8 . The first stripsection 512 extends along the x-direction, from the mentioned first reargroove 261.

The first connecting section 513 connects between the element mountingsection 511 and the first strip section 512. The shape and size of thefirst connecting section 513 are not specifically limited. In theillustrated example, the first connecting section 513 has a shape havingtwo bent portions.

The second wiring portion 52 is formed on the second layer 3 of the basematerial 1. The second wiring portion 52 includes a plurality of wirebonding sections 521, a plurality of second strip sections 522, and aplurality of second connecting sections 523.

To each of the plurality of wire bonding sections 521, a plurality ofwires 67 are connected. In this embodiment, the plurality of wirebonding sections 521 are aligned in the y-direction, and formed on oneside (front side) of the second main portion 310 in the x-direction. Theshape of the wire bonding sections 521 is not specifically limited. Inthe illustrated example, the wire bonding sections 521 are rectangular.As shown in FIG. 1 , the plurality of wire bonding sections 521 areexposed from the third layer 4, as viewed in the z-direction.

The plurality of second strip sections 522 are formed on the second mainportion 310 of the second layer 3, so as to respectively reach upperfour of the plurality of second rear grooves 361 in the y-direction, inFIG. 9 . The second strip sections 522 each extend along thex-direction, from the corresponding second rear groove 361. Here, asshown in FIG. 8 , the first strip section 512 and the plurality ofsecond strip sections 522 are spaced from each other in the y-direction,as viewed in the z-direction.

The plurality of second connecting sections 523 each connect betweencorresponding ones of the plurality of wire bonding sections 521 and theplurality of second strip section 522. The shape and size of the secondconnecting section 523 is not specifically limited. In the illustratedexample, the second connecting section 523 has a shape having two bentportions.

The third wiring portion 53 is formed on the third layer 4 of the basematerial 1. The third wiring portion 53 includes a plurality of mountingterminal sections 531 and a mounting terminal section 532.

The plurality of mounting terminal sections 531 are formed on the thirdmain portion 410 of the third layer 4, and aligned in the y-directionwith a spacing between each other. The plurality of mounting terminalsections 531 respectively reach upper four of the plurality of thirdrear grooves 461 in the y-direction in FIG. 10 . The mounting terminalsections 531 each extend along the x-direction, from the correspondingthird rear groove 461. The mounting terminal sections 531 are larger insize in the y-direction, than the second strip section 522. Theplurality of mounting terminal sections 531 are, for example, anodeelectrodes.

The mounting terminal section 532 is formed on the third main portion410 of the third layer 4. The mounting terminal section 532 reaches thelowermost one of the plurality of third rear grooves 461 in they-direction, in FIG. 10 . The mounting terminal section 532 extendsalong the x-direction, from the mentioned third rear groove 461. Themounting terminal section 532 is larger in size in the y-direction, thanthe first strip section 512. The plurality of mounting terminal sections531 and the mounting terminal section 532 are spaced from each other inthe y-direction. The mounting terminal section 532 is, for example, acathode electrode.

In this embodiment, as shown in FIG. 1 , a center O1 of the wire bondingsections 521 and a center O2 of the mounting terminal section 531, whichare electrically continuous with each other, are shifted in they-direction from each other by a gap G, as viewed in the z-direction.The plurality of gaps G shown in FIG. 1 may be the same as, or differentfrom, each other. In addition, imaginary lines E each extended from theedge of the wire bonding sections 521 in the y-direction intersects withthe mounting terminal section 531.

As shown in FIG. 3 , the plurality of rear communicating portions 501are formed so as to respectively cover four of the plurality of reargrooves 161 of the base material 1 on the right, in FIG. 3 . In thisembodiment, the rear communicating portions 501 each reach the endportion of the rear groove 161 on one side (upper end) in thez-direction. In the illustrated example, the rear communicating portions501 also reach the end portion of the corresponding rear groove 161, onthe other side (lower end) in the z-direction. The rear communicatingportions 501 are each in contact with the second strip section 522 ofthe second wiring portion 52, and the mounting terminal section 531 ofthe third wiring portion 53, thus to be electrically continuoustherewith. Accordingly, the wire bonding sections 521 is electricallycontinuous with the mounting terminal section 531, via the secondconnecting section 523, the second strip section 522, and the rearcommunicating portion 501.

The rear communicating portion 502 is formed so as to cover the left-endone of the plurality of rear grooves 161 of the base material 1, in FIG.3 . In this embodiment, the rear communicating portion 502 reaches theend portion of the rear groove 161, on one side (upper end) in thez-direction. In the illustrated example, the rear communicating portion502 also reaches the end portion of the rear groove 161, on the otherside (lower end) in the z-direction. The rear communicating portion 502is in contact with the first strip section 512 of the first wiringportion 51, and the mounting terminal section 532 of the third wiringportion 53, thus to be electrically continuous therewith. Accordingly,the element mounting section 511 is electrically continuous with themounting terminal section 532, via the first connecting section 513, thefirst strip section 512, and the rear communicating portion 502.

As shown in FIG. 2 , the plurality of front portions 505 respectivelycover the plurality of front grooves 163. In the illustrated example,the front portions 505 covers the entirety of the front groove 163, andreaches both end portions of the front groove 163 in the z-direction.The front portions 505 are not in contact with the first wiring portion51, the second wiring portion 52, and the third wiring portion 53, andare therefore not electrically continuous with those portions.

The semiconductor laser element 6 emits laser light of a predeterminedwavelength. The specific configuration of the semiconductor laserelement 6 is not limited. In this embodiment, the semiconductor laserelement 6 includes a semiconductor layer 61, a plurality of waveguides62 and a plurality of electrodes 63.

The semiconductor layer 61 includes a plurality of layers formed of asemiconductor material, stacked on each other. For example, thesemiconductor layer 61 includes an n-clad layer, a p-clad layer, and anactive layer interposed therebetween. Owing to the recombination ofelectrons and holes in the active layer, light is generated.

The plurality of waveguides 62 repeatedly reflect the light generated inthe active layer in the x-direction, to thereby generate the laser lightof a predetermined wavelength. In this embodiment, the plurality ofwaveguides 62 are aligned in the y-direction with a spacing between eachother, and each extend in the x-direction. The semiconductor laserelement 6 is of a multi beam type, and capable of individually emittingthe laser light from each of the waveguides 62, in other wordsindependently from other waveguides.

The plurality of electrodes 63 are respectively provided for theplurality of waveguides 62, and aligned in the y-direction with aspacing from each other. A plurality of wires 67 are connected to theplurality of electrodes 63. In the illustrated example, a plurality ofwires 67 are connected to each of the electrodes 63, to supply a largercurrent thereto.

In this embodiment, a non-illustrated electrode, provided on the lowerface of the semiconductor layer 61 of the semiconductor laser element 6,is conductively bonded to the element mounting section 511, via anon-illustrated conductive bonding material such as a silver paste.Accordingly, the semiconductor laser element 6 is mounted on the firstobverse face 21 of the pedestal portion 240. As shown in FIG. 1 and FIG.5 , the end portion of the semiconductor laser element 6 on one side inthe x-direction sticks out from the pedestal portion 240 to the one sidein the x-direction, by a length L. Such a configuration is advantageousin preventing interference between the light from the semiconductorlaser element 6 and the pedestal portion 240, and is therefore adoptedalso in the subsequent drawings. However, in the case where theinterference of the light from the semiconductor laser element 6 ispermissible, the semiconductor laser element 6 may be formed so as notto stick out from the pedestal portion 240, for example such that theend portion of the semiconductor laser element 6 on one side in thex-direction, and the end portion of the pedestal portion 240 on one sidein the x-direction become generally flush with each other.

The number of waveguides 62 to be provided in the semiconductor laserelement 6 is not specifically limited. In the illustrated example, thesemiconductor laser element 6 includes four waveguides 62.Correspondingly, the semiconductor laser element 6 includes fourelectrodes 63. In addition, the second wiring portion 52 includes fourwire bonding sections 521, four second strip sections 522, and foursecond connecting sections 523. The base material 1 includes five reargrooves 161, and the wiring portion 5 includes four rear communicatingportions 501 and one rear communicating portion 502. Further, the thirdwiring portion 53 includes four mounting terminal sections 531 and onemounting terminal section 532.

The first cover 7, covering the emission part 18, is formed of amaterial that transmits the light from the semiconductor laser element6. In this embodiment, the first cover 7 is, for example, made oftransparent glass. A predetermined coating may be applied to the firstcover 7, to improve emission efficiency. In the illustrated example, thefirst cover 7 is rectangular as viewed in the x-direction, andaccommodated in the front recess 171 of the base material 1. The methodto attach the first cover 7 to the base material 1 is not specificallylimited. For example, an adhesive such as a UV-curable resin may beemployed. In the illustrated example, the first cover 7 has a flat plateshape, with a constant size in the x-direction.

The second cover 8 covers the opening 17. The material of the secondcover 8 is not specifically limited. In this embodiment, the secondcover 8 is formed of glass. A predetermined coating may be applied tothe second cover 8, to attenuate predetermined external light. In theillustrated example, the second cover 8 is rectangular as viewed in thez-direction, and accommodated in the annular recess 440 of the basematerial 1. The method to attach the second cover 8 to the base material1 is not specifically limited. For example, an adhesive such as aUV-curable resin may be employed. In the illustrated example, the secondcover 8 has a flat plate shape, with a constant size in the z-direction.

When the first cover 7 and the second cover 8 are provided, the firstcover 7 and the second cover 8 may be attached so as to tightly closethe inner space defined by the base material 1. In this case, it ispreferable to attach the first cover 7 and the second cover 8 to thebase material 1 in a depressurized environment, so that the first cover7 and the second cover 8 are pressed against the base material 1 by theatmospheric pressure, when the semiconductor laser device A1 iscompleted.

The semiconductor laser device A1 provides the following advantageouseffects.

According to this embodiment, the plurality of mounting terminalsections 531 and the mounting terminal section 532 are formed on theobverse face 11 (third obverse face 41), so that the obverse face 11(third obverse face 41) serves as a mounting face. Therefore, thesemiconductor laser device A1 can be surface-mounted on anon-illustrated circuit board.

When the obverse face 11 can be used as a mounting face, the laser lightcan be emitted from the semiconductor laser device A1 to one side (frontside) in the x-direction. Accordingly, the emission direction of thelaser light can be shifted by 90 degrees, with respect to asemiconductor laser device to be mounted using leads.

The opening 17 provides an opening from the obverse face 11 serving asthe mounting face. In the manufacturing process of the semiconductorlaser device A1, the base material 1 can be set, after being formed,such that the opening 17 is oriented vertically upward. Then thesemiconductor laser element 6 is mounted, the wires 67 are bonded, andthe first cover 7 and the second cover 8 are attached, with theorientation of the base material 1 kept as above. In addition, acontinuity test and a light emission test of the semiconductor laserelement 6 can be carried out, using the plurality of mounting terminalsections 531 and the mounting terminal section 532, which are orientedvertically upward. Therefore, it is no longer necessary to turn thesemiconductor laser device A1 upside down, to perform the test using theplurality of mounting terminal sections 531 and the mounting terminalsection 532, after the completion of the semiconductor laser device A1.In addition, since the base material 1 includes a hollow portion at theemission part 18, a stress originating from the operation of thesemiconductor laser device A1 can be mitigated.

Because of the presence of the pedestal portion 240 and the bottomportion 250, the first obverse face 21 on one side of the pedestalportion 240 in the x-direction is located on one side in thez-direction, with respect to the bottom portion 250. Utilizing suchfirst obverse face 21 as the mounting face prevents the laser lightemitted from the semiconductor laser element 6 from being blocked by thepedestal portion 240 and the bottom portion 250. In addition, formingthe end portion of the semiconductor laser element 6 on one side (frontend) in the x-direction, so as to stick out from the pedestal portion240 to one side (front side) in the x-direction, is advantageous inpreventing the laser light from being blocked. However, it is notmandatory that the semiconductor laser element 6 is formed so as tostick out from the pedestal portion 240.

The plurality of second strip sections 522 extend to the other side(rear side) in the x-direction, with respect to the semiconductor laserelement 6. In other words, the plurality of second strip sections 522are provided on the opposite side from the side to which the laser lightof the semiconductor laser element 6 is emitted. Such a configurationallows the plurality of second strip sections 522 to be linearly formed,thereby minimizing the difference in distance between each other. Thisconfiguration facilitates the lengths of the conduction paths to theplurality of waveguides 62 and the plurality of electrodes 63 of thesemiconductor laser element 6 to be uniform. Further, the first stripsection 512 is also linear like the plurality of second strip sections522, and spaced from the plurality of second strip sections 522 in they-direction, as viewed in the z-direction. Therefore, an accidentalmutual interference can be prevented, when power is supplied. This isadvantageous in causing the plurality of semiconductor laser elements 6to individually emit the light, at a desired timing.

The base material 1 includes the inner end face 36. From thesemiconductor laser element 6, the light may be emitted to the otherside (rear side) in the x-direction, not only to one side (front side)in the x-direction. It is preferable that the light emitted backward isnot superposed on the light emitted forward. In this embodiment, theinner end face 36 is provided on the other side (rear side) of thesemiconductor laser element 6 in the x-direction. Such a configurationprevents the laser light proceeding from the semiconductor laser element6 to the rear side from being directed to the emission part 18.

On the obverse face 11 or mounting face, the locations of the pluralityof mounting terminal sections 531 and the mounting terminal section 532are biased to the other side (rear side) in the x-direction. Incontrast, the plurality of front portions 505 are spaced from theplurality of mounting terminal sections 531 and the mounting terminalsection 532, and located on one side (front side) in the x-direction.Therefore, the surface tension of molten solder can be applied to thesemiconductor laser device A1 with a better balance, when thesemiconductor laser device A1 is mounted on a circuit board.Consequently, the mounting position and posture of the semiconductorlaser device A1 can be more properly adjusted.

FIG. 11 to FIG. 40 illustrate the variations and other embodiments ofthe present disclosure. In these drawings, the elements same as orsimilar to those of the foregoing embodiment are given the same numeral.As a matter of course, a part of the foregoing embodiment and a part ofthe following variations and embodiments may be combined or replacedwith each other, to attain various combinations.

FIG. 11 is an enlarged partial cross-sectional view showing a firstvariation of the semiconductor laser device A1. In the semiconductorlaser device A11 according to this variation, the inner end face 36 isupright along the z-direction, and not inclined with respect thereto.

FIG. 12 is an enlarged partial cross-sectional view showing a secondvariation of the semiconductor laser device A1. In the semiconductorlaser device A12 according to this variation, the inclination of theinner end face 36 is different from that of the inner end face 36 in thesemiconductor laser device A1. In this variation, the inner end face 36is inclined so as to be shifted to the other side (rear side) in thex-direction, along the direction from one side (upper side) in thez-direction toward the other side (lower side) in the z-direction.

As is apparent from the foregoing variations, the angle of the inner endface 36 may be determined as desired.

FIG. 13 is a cross-sectional view showing a third variation of thesemiconductor laser device A1. In the semiconductor laser device A13according to this variation, the method to attach the first cover 7 tothe base material 1 is different from the method adopted in thesemiconductor laser device A1.

In this variation, the base material 1 is without the front recess 171.The first cover 7 is attached to the front end face 13 of the basematerial 1, for example via an adhesive. As is apparent from thisvariation, the method or structure to attach the first cover 7 to thebase material 1 is not specifically limited.

FIG. 14 is a cross-sectional view showing a fourth variation of thesemiconductor laser device A1. In the semiconductor laser device A14according to this variation, the first cover 7 has a differentconfiguration from that of the semiconductor laser device A1.

In this variation, the first cover 7 includes a lens portion 71. Thelens portion 71 swells in the x-direction, thus forming what is known asa convex lens. The first cover 7 thus configured refracts the laserlight from the semiconductor laser element 6 with the lens portion 71,thereby improving the directionality in the x-direction. Here, the lensportion 71 formed as the convex lens is merely exemplary, and the lensportion 71 may be formed in various other shape, such as a concave lens.

FIG. 15 is a cross-sectional view showing a fifth variation of thesemiconductor laser device A1. In the semiconductor laser device A15according to this variation, the configuration of the semiconductorlaser element 6 is different from that of the semiconductor laser deviceA1.

In this variation, the semiconductor laser element 6 includes a submount68. The submount 68 is, for example, formed of Si, GaN, SiC, or AlN. Thesubmount 68 includes a semiconductor layer 61 formed on the upper facethereof.

The submount 68 includes a through wiring 69. The through wiring 69 is aconductive material penetrating through the submount 68 in thez-direction. The through wiring 69 is electrically continuous with anon-illustrated electrode of the semiconductor layer 61.

The first layer 2 according to this variation is without the pedestalportion 240 provided in the semiconductor laser device A1. The firstmain portion 210 and the bottom portion 250 have the same thickness aseach other. The element mounting section 511 of the first wiring portion51 of the wiring portion 5 is formed on the first obverse face 21 of thebottom portion 250. The through wiring 69 of the submount 68 iselectrically continuous with the element mounting section 511.

The configuration according to this variation also enables thesemiconductor laser device A15 to be surface-mounted. The semiconductorlaser element 6 may be with or without the submount 68. Various types ofthe semiconductor laser element 6 can be adopted, by modifying theconfiguration of the base material 1 and the wiring portion 5, as thecase may be.

FIG. 16 is a plan view showing a sixth variation of the semiconductorlaser device A1. FIG. 17 is a cross-sectional view taken along a lineXVII-XVII in FIG. 16 .

In the semiconductor laser device A16 according to this variation, theend portion of the semiconductor laser element 6 on one side in thex-direction is shifted to the other side in the x-direction by a lengthL′, with respect to the end portion of the pedestal portion 240 on oneside in the x-direction. In other words, the semiconductor laser element6 is retracted to the other side in the x-direction from the end portionof the pedestal portion 240 on one side in the x-direction, instead ofsticking out to one side in the x-direction from the end portion of thepedestal portion 240 on one side in the x-direction.

The configuration according to variation increases the area where thesemiconductor laser element 6 and the element mounting section 511(pedestal portion 240) overlap with each other. Therefore, the heatoriginating from the light emission of the semiconductor laser element 6can be efficiently conducted to the pedestal portion 240 (base material1). In addition, the increase in bonding area between the semiconductorlaser element 6 and the element mounting section 511 (pedestal portion240) leads to increased bonding strength therebetween. Further, as isapparent from this variation, the positional relation between the endportion of the semiconductor laser element 6 on one side in thex-direction and the end portion of the pedestal portion 240 on one sidein the x-direction (or end portion of the submount 68 on one side in thex-direction) is in no way limited. This also applies to other variationsand embodiments.

FIG. 18 to FIG. 20 each illustrate a semiconductor laser deviceaccording to a second embodiment of the present disclosure. FIG. 18 is aplan view showing a semiconductor laser device A2 according to thisembodiment. FIG. 19 is a partial plan view showing the base material 1of the semiconductor laser device A2. FIG. 20 is another plan viewshowing the base material 1 of the semiconductor laser device A2.

The semiconductor laser device A2 is different from the semiconductorlaser device A1, in the location of the first strip section 512 of thefirst wiring portion 51 and the plurality of second strip sections 522of the second wiring portion 52.

In this embodiment, the plurality of second strip sections 522 arelocated on the respective sides of the first strip section 512 in they-direction, as viewed in the z-direction. In the illustrated example,two each of the second strip sections 522 are located on the respectivesides of the first strip section 512 in the y-direction.

As shown in FIG. 19 , the first strip section 512 is located generallyat the center of the first main portion 210 in the y-direction. Thefirst connecting section 513 has a linear shape extending in thex-direction, instead of a bent shape.

As shown in FIG. 20 , the four second connecting sections 523 includetwo second connecting sections 523 on one side in the y-direction, andtwo second connecting sections 523 on the other side in the y-direction,which are bent in opposite directions to each other.

The configuration according to this embodiment also enables thesemiconductor laser device A2 to be surface-mounted. In addition, theconfiguration according to this embodiment facilitates the path lengthsof the plurality of second strip sections 522 to be made uniform.Further, since the first strip section 512 and the first connectingsection 513 both have the linear shape, the inductance component of theconduction path can be reduced.

FIG. 21 to FIG. 27 each illustrate a semiconductor laser deviceaccording to a third embodiment of the present disclosure. FIG. 21 is aplan view showing a semiconductor laser device A3 according to thisembodiment. FIG. 22 is a side view showing the semiconductor laserdevice A3. FIG. 23 is a bottom view showing the semiconductor laserdevice A3. FIG. 24 is a cross-sectional view taken along a lineXXIV-XXIV in FIG. 21 . FIG. 25 is a partial plan view showing the basematerial 1 of the semiconductor laser device A3. FIG. 26 is anotherpartial plan view showing the base material 1 of the semiconductor laserdevice A3. FIG. 27 is another partial plan view showing the basematerial 1 of the semiconductor laser device A3.

In the semiconductor laser device A3, as shown in FIG. 23 and FIG. 24 ,the reverse face 12 of the base material 1 is used as a mounting face.

The base material 1 includes a side groove 162. The side groove 162 isrecessed from one of the side faces 15, and extends along thez-direction. In this embodiment, the side groove 162 reaches the firstreverse face 22 (reverse face 12). In the illustrated example, the sidegroove 162 also reaches the third obverse face 41 (obverse face 11).

The first layer 2 includes a first side groove 262. The first sidegroove 262 is recessed from the first side face 25, and extends alongthe z-direction. The second layer 3 includes a second side groove 362.The second side groove 362 is recessed from the second side face 35, andextends along the z-direction. The third layer 4 includes a third sidegroove 462. The third side groove 462 is recessed from the third sideface 45, and extends along the z-direction. The side groove 162 includesthe first side groove 262, the second side groove 362, and the thirdside groove 462.

The wiring portion 5 includes the plurality of rear communicatingportions 501 and a side communicating portion 503. The plurality of rearcommunicating portions 501 respectively cover the plurality of reargrooves 161, as in the foregoing embodiments. The side communicatingportion 503 covers the side groove 162, and reaches the end portion ofthe side groove 162 on the other side (lower end) in the z-direction. Inthe illustrated example, the side communicating portion 503 also reachesthe end portion of the side groove 162 on one side (upper end) in thez-direction.

As shown in FIG. 23 and FIG. 25 , the first wiring portion 51 includesthe element mounting section 511, the first connecting section 513, aplurality of mounting terminal sections 514, a mounting terminal section515, and a first connecting section 518. The first connecting section513 extends from the element mounting section 511 toward the first sidegroove 262 in the y-direction, and reaches the first side groove 262.Accordingly, the first connecting section 513 is in contact with theside communicating portion 503.

The mounting terminal section 515 is formed on the first reverse face 22(reverse face 12). The mounting terminal section 515 is rectangular asviewed in the z-direction, and larger than the mounting terminal section514. The first connecting section 518 extends from the mounting terminalsection 515 in the y-direction, and reaches the first side groove 262.Accordingly, the first connecting section 518 is in contact with theside communicating portion 503. Consequently, the element mountingsection 511 is electrically continuous with the mounting terminalsection 515, via the first connecting section 513, the sidecommunicating portion 503 and the first connecting section 518. Here, itis preferable to form the mounting terminal section 515 so as to overlapwith the semiconductor laser element 6, as viewed in the z-direction, asshown in FIG. 24 and FIG. 25 . The mounting terminal section 515 is, forexample, a cathode electrode.

The plurality of mounting terminal sections 514 are provided in a regionof the first reverse face 22 (reverse face 12) on the other side (rearside) in the x-direction. The plurality of mounting terminal sections514 respectively reach the plurality of first rear grooves 261.Accordingly, the plurality of mounting terminal sections 514 arerespectively in contact with the plurality of rear communicatingportions 501. Here, it is preferable to form the plurality of mountingterminal sections 514 so as to respectively overlap with the pluralityof wire bonding sections 521, as viewed in the z-direction, as shown inFIG. 24 and FIG. 26 . The mounting terminal section 514 is, for example,an anode electrode.

In the illustrated example, the second wiring portion 52 includes theplurality of wire bonding sections 521 and the plurality of second stripsections 522, but is without the second connecting section 523 providedin the foregoing embodiments. In addition, the wiring portion 5 iswithout the third wiring portion provided in the foregoing embodiments.The second strip section 522 is in contact with the rear communicatingportion 501. Therefore, the plurality of wire bonding sections 521 arerespectively electrically continuous with the plurality of mountingterminal sections 514, via the plurality of second strip sections 522and the plurality of rear communicating portions 501. However, thesecond wiring portion 52 may include the second connecting section 523,and the wiring portion 5 may include the third wiring portion 53.

The configuration according to this embodiment also enables thesemiconductor laser device A3 to be surface-mounted, using the reverseface 12 as a mounting face. In addition, this embodiment eliminates theneed to form the wiring portion 5 on the obverse face 11 of the basematerial 1. In addition, the mounting terminal section 515 can belocated so as to overlap with the semiconductor laser element 6, asviewed in the z-direction. Further, the plurality of mounting terminalsections 514 can be located so as to respectively overlap with theplurality of wire bonding sections 521, as viewed in the z-direction.This is advantageous in reducing the size of the semiconductor laserdevice A3.

FIG. 28 is a cross-sectional view showing a first variation of thesemiconductor laser device A3. In the semiconductor laser device A31according to this variation, the method to attach the second cover 8 tothe base material 1 is different from the foregoing examples.

In this variation, the base material 1 is without the annular recess440. The second cover 8 is attached to the obverse face 11 of the basematerial 1, for example via an adhesive. As is apparent from thisvariation, the method or structure to attach the second cover 8 to thebase material 1 is not specifically limited.

FIG. 29 to FIG. 32 each illustrate a semiconductor laser deviceaccording to a fourth embodiment of the present disclosure. FIG. 29 is aplan view showing a semiconductor laser device A4 according to thisembodiment. FIG. 30 is a bottom view showing the semiconductor laserdevice A4. FIG. 31 is a cross-sectional view taken along a lineXXXI-XXXI in FIG. 29 . FIG. 32 is a cross-sectional view taken along aline XXXII-XXXII in FIG. 29 .

In this embodiment, the semiconductor laser device A4 includes athermistor 9. The thermistor 9 is an example of a temperature detectionelement for detecting the operating temperature of the semiconductorlaser element 6.

In the illustrated example, the thermistor 9 is provided on the submount68 of the semiconductor laser element 6. As shown in FIG. 32 , thesubmount 68 includes a through wiring 9 and a through wiring 92, inaddition to the through wiring 69. The through wiring 91 and the throughwiring 92 are formed of a conductive material such as a metal, and eachextend from the thermistor 9, and through the submount 68 to the lowerface thereof. Here, FIG. 31 and FIG. 32 are schematic representations ofthe thermistor 9 formed on the submount 68. The specific configurationof thermistor 9 on the submount 68 may be determined in various manners.

As shown in FIG. 30 to FIG. 32 , the first wiring portion 51 of thewiring portion 5 includes the pair of element mounting sections 511, thepair of first connecting sections 513, the plurality of mountingterminal sections 514, the mounting terminal section 515, a mountingterminal section 516, and a plurality of first connecting sections 518.In addition, the base material 1 includes a pair of side grooves 162.The pair of side grooves 162 are respectively formed in the pair of sidefaces 15. The wiring portion 5 includes a pair of side communicatingportions 503. The pair of side communicating portions 503 respectivelycover the pair of side grooves 162.

The plurality of element mounting sections 511 are formed on the firstobverse face 21 of the first layer 2, with a spacing from each other inthe y-direction. The through wiring 69 and the through wiring 91 areconnected to one of the element mounting sections 511. The throughwiring 92 is connected to the other element mounting section 511.

The pair of first connecting sections 513 each extend in they-direction, from the corresponding element mounting section 511 to thecorresponding side groove 162. The pair of first connecting sections 513are respectively in contact with the pair of side communicating portions503.

The plurality of mounting terminal sections 514 and the mountingterminal section 515 are configured similarly to the mounting terminalsections 514 and the mounting terminal section 515 of the semiconductorlaser device A3. The mounting terminal section 515 is electricallycontinuous with, for example, the non-illustrated cathode electrode ofthe thermistor 9, via the first connecting section 518, the sidecommunicating portion 503, the first connecting section 513, the elementmounting section 511, and the through wiring 91.

The mounting terminal section 516 is spaced from the mounting terminalsection 515 in the y-direction. One of the first connecting sections 518is connected to the mounting terminal section 516. The first connectingsection 518 is in contact with the corresponding side communicatingportion 503. As shown in FIG. 32 , the mounting terminal section 516 iselectrically continuous with, for example, the non-illustrated anodeelectrode of the thermistor 9, via the first connecting section 518, theside communicating portion 503, the first connecting section 513, theelement mounting section 511, and the through wiring 92.

The configuration according to this embodiment also enables thesemiconductor laser device A4 to be surface-mounted. In addition, sincethe thermistor 9 is provided, the operating temperature of thesemiconductor laser element 6 can be monitored from outside. Locatingthe thermistor 9 inside the submount 68 leads to a reduction in size ofthe semiconductor laser device A4. Utilizing the first reverse face 22(reverse face 12) as a mounting face also contributes to reducing thesize of the semiconductor laser device A4.

FIG. 33 to FIG. 35 each illustrate a semiconductor laser deviceaccording to a fifth embodiment of the present disclosure. FIG. 33 is aplan view showing a semiconductor laser device A5 according to thisembodiment. FIG. 34 is a front view showing the semiconductor laserdevice A5. FIG. 35 is a cross-sectional view taken along a lineXXXV-XXXV in FIG. 33 .

The semiconductor laser device A5 includes the thermistor 9, like thesemiconductor laser device A4. In this embodiment, the thermistor 9 isprovided as an element independent from the semiconductor laser element6. The semiconductor laser element 6 may be with or without the submount68. In the illustrated example, the semiconductor laser element 6 iswithout the submount 68. The semiconductor laser element 6 is mounted onthe pedestal portion 240 of the first layer 2.

The first wiring portion 51 includes an element mounting section 5111, awire bonding sections 5112, and a connecting section 5113, in additionto the element mounting section 511 and the first connecting section513. The element mounting section 5111 is spaced from the elementmounting section 511 in the y-direction. The element mounting section511 and the element mounting section 5111 are connected via the firstconnecting section 513. The element mounting section 5111 serves as theregion for the thermistor 9 to be mounted. The wire bonding sections5112 is spaced from the element mounting section 5111 in thex-direction. A wire 99 is connected to the wire bonding sections 5112.The wire 99 connects between the thermistor 9 and the wire bondingsections 5112. The connecting section 5113 extends from the wire bondingsections 5112 in the y-direction, to the side groove 162. The connectingsection 5113 is in contact with the side communicating portion 503.

The configuration of the reverse face 12 of the semiconductor laserdevice A5 is, for example, similar to that of the semiconductor laserdevice A4. As shown in FIG. 33 , the thermistor 9 and the wire 99 areexposed in the opening 17 of the base material 1, as viewed in thez-direction. In addition, as shown in FIG. 34 , a part of the thermistor9 protrudes from the emission part 18, and is hidden behind the frontend face 13, as viewed in the x-direction.

The configuration according to this embodiment also enables thesemiconductor laser device A5 to be surface-mounted. In addition, sincethe thermistor 9 is provided, the operating temperature of thesemiconductor laser element 6 can be monitored from outside. As isapparent from this embodiment, the mounting structure of the thermistor9 may be designed in various manners, depending on the configuration ofthe base material 1 and the wiring portion 5.

FIG. 36 to FIG. 38 each illustrate a semiconductor laser deviceaccording to a sixth embodiment of the present disclosure. FIG. 36 is aplan view showing a semiconductor laser device A6 according to thisembodiment. FIG. 37 is a bottom view showing the semiconductor laserdevice A6. FIG. 38 is a cross-sectional view taken along a lineXXXVIII-XXXVIII in FIG. 36 .

In this embodiment, the base material 1 includes the first layer 2 andthe second layer 3. The first layer 2 is, for example, formed of a glassepoxy resin in a flat plate shape. The second layer 3 is, for example,formed of an epoxy resin. Thus, the base material 1 may be composed of aplurality of elements of different materials.

The first layer 2 is rectangular as viewed in the z-direction, andincludes the first obverse face 21, the first reverse face 22, the firstfront end face 23, the first rear end face 24, and the pair of firstside faces 25. The first reverse face 22 corresponds to the reverse face12, and serves as a mounting face in this embodiment.

The second layer 3 is formed, for example, by combining a molded epoxyresin to the first layer 2. The second layer 3 includes the opening 17and the emission part 18 and, in the illustrated example, also includesan annular recess 340 and the front recess 171. The annular recess 340is similar to the annular recess 440 in the foregoing embodiments, andused to attach the second cover 8.

The wiring portion 5 includes an element mounting section 591, aplurality of wire bonding sections 592, a mounting terminal section 593,a plurality of mounting terminal sections 594, a plurality of throughwirings 595, and a plurality of through wirings 596.

The element mounting section 591, on which the semiconductor laserelement 6 is mounted, is formed on the first obverse face 21 of thefirst layer 2. The plurality of wire bonding sections 592 are located onthe other side (rear side) of the element mounting section 591 in thex-direction, and aligned in the y-direction with a spacing from eachother.

The mounting terminal section 593 is formed on the first reverse face 22(reverse face 12), so as to overlap with the element mounting section591, as viewed in the z-direction. The plurality of wire bondingsections 592 are formed on the first reverse face 22 (reverse face 12),so as to respectively overlap with the plurality of wire bondingsections 592, as viewed in the z-direction.

The plurality of through wirings 595, penetrating through the firstlayer 2 in the z-direction, are formed of a conductive material such asa metal. The plurality of through wirings 595 connect between theelement mounting section 591 and the mounting terminal section 593. Inthe illustrated example, the plurality of through wirings 595 arearranged in a matrix pattern.

The plurality of through wirings 596, penetrating through the firstlayer 2 in the z-direction, are formed of a conductive material such asa metal. The plurality of through wirings 596 respectively connectbetween the plurality of wire bonding sections 592 and the plurality ofmounting terminal sections 594. As shown in FIG. 36 , the throughwirings 596 are each located so as to overlap with a portion of the wirebonding section 592 on the other side in the x-direction, as viewed inthe z-direction. Such a location is advantageous in bonding the wire 67at a position distant from the through wiring 596.

The configuration according to this embodiment also enables thesemiconductor laser device A6 to be surface-mounted. In addition,providing the through wirings 595 and the through wirings 596 allows thearea necessary for arranging the wiring portion 5 to be reduced, whichis advantageous in reducing the size of the semiconductor laser deviceA6. Further, the plurality of through wirings 595 contribute toefficiently transmitting the heat generated from the semiconductor laserelement 6 to outside.

FIG. 39 and FIG. 40 each illustrate a semiconductor laser deviceaccording to a seventh embodiment of the present disclosure. FIG. 39 isa plan view showing a semiconductor laser device A7 according to thisembodiment. FIG. 40 is a bottom view showing the semiconductor laserdevice A7.

In this embodiment, the semiconductor laser element 6 only a singlewaveguide 62 and a single electrode 63. Correspondingly, a single wirebonding section 592 and a single mounting terminal section 594 areprovided.

The configuration according to this embodiment also enables thesemiconductor laser device A7 to be surface-mounted. In addition, as isapparent from this embodiment, the number of waveguides 62 and thenumber of electrodes 63 in the semiconductor laser element 6 accordingto the present disclosure are not specifically limited. The number ofwaveguides 62 and electrodes 63 may be one each, or two or more eachexcept four. Further, for example when it is unnecessary to emit thelaser light at different timings from the plurality of waveguides 62 ofthe semiconductor laser device A1, the number of mounting terminalsections 531 may be just one.

The semiconductor laser device according to the present disclosure isnot limited to the foregoing embodiments. The specific configuration ofthe elements of the semiconductor laser device according to the presentdisclosure may be modified in various manners.

Clause 1. A semiconductor laser device comprising:

-   -   a semiconductor laser element;    -   a base material supporting the semiconductor laser element; and    -   a wiring portion formed on the base material and constituting a        conduction path to the semiconductor laser element,    -   wherein the base material includes: a mounting face oriented to        one side in a thickness direction of the base material, the        semiconductor laser element being mounted on the mounting face;        and an emission part located on one side with respect to the        semiconductor laser element in a first direction perpendicular        to the thickness direction, and    -   light from the semiconductor laser element is emitted out        through the emission part.

Clause 2. The semiconductor laser device according to clause 1, whereinthe base material includes an opening located on the one side in thethickness direction with respect to the semiconductor laser element.

Clause 3. The semiconductor laser device according to clause 2, whereinthe emission part is provided with a first cover that transmits lightfrom the semiconductor laser element.

Clause 4. The semiconductor laser device according to clause 3, whereinthe first cover includes a lens portion that refracts the light from thesemiconductor laser element.

Clause 5. The semiconductor laser device according to any one of clauses2 to 4, further comprising a second cover that covers the opening.

Clause 6. The semiconductor laser device according to any one of clauses2 to 5, wherein the base material includes a mounting face oriented inthe thickness direction, and the wiring portion includes a mountingterminal section formed on the mounting face.

Clause 7. The semiconductor laser device according to clause 6, whereinthe mounting face is oriented to the one side in the thicknessdirection.

Clause 8. The semiconductor laser device according to clause 6, whereinthe mounting face is oriented to another side in the thicknessdirection.

Clause 9. The semiconductor laser device according to clause 8, whereinthe wiring portion includes an element mounting section formed on themounting face, and the semiconductor laser element is mounted on theelement mounting section.

Clause 10. The semiconductor laser device according to clause 9, whereinthe base material includes: a rear end face oriented to another side inthe first direction and reaching the mounting face; and at least onerear groove recessed from the rear end face and reaching the mountingface, and

-   -   the wiring portion includes at least one rear communicating        portion formed on the rear groove and electrically connecting        the semiconductor laser element and the mounting terminal        section to each other.

Clause 11. The semiconductor laser device according to clause 10,wherein the base material includes: a bottom portion located on theanother side in the thickness direction with respect to the mountingface; and a pedestal portion protruding from the bottom portion to theone side in the thickness direction and forming the mounting face.

Clause 12. The semiconductor laser device according to clause 10,wherein the semiconductor laser element includes a semiconductor layerhaving a light emitting function, and a submount supporting thesemiconductor layer.

Clause 13. The semiconductor laser device according to clause 11 or 12,wherein the base material includes an inner end face located on theanother side in the first direction with respect to the semiconductorlaser element and inclined with respect to the thickness direction.

Clause 14. The semiconductor laser device according to any one ofclauses 11 to 13, further comprising a wire, wherein the wiring portionincludes at least one wire bonding section that is located on theanother side in the first direction with respect to the semiconductorlaser element and located on the one side in the thickness directionwith respect to the mounting face, and

-   -   the wire is connected to the semiconductor laser element and the        wire bonding section.

Clause 15. The semiconductor laser device according to clause 14,wherein the semiconductor laser element includes a plurality ofwaveguides aligned in a second direction perpendicular to the firstdirection and the thickness direction, the waveguides being capable ofemitting light independently of each other to the one side in the firstdirection.

Clause 16. The semiconductor laser device according to clause 15,wherein the at least one rear groove includes a plurality of reargrooves aligned in the second direction,

-   -   the at least one wire bonding section includes a plurality of        wire bonding sections aligned in the second direction,    -   the at least one rear communicating portion includes a plurality        of rear communicating portions formed in the plurality of rear        grooves, respectively,    -   the wiring portion includes a plurality of second strip sections        each electrically connecting one of the plurality of wire        bonding sections and one of the plurality of rear communicating        portions to each other, and    -   the plurality of second strip sections are aligned in the second        direction and each extend in the first direction.

Clause 17. The semiconductor laser device according to any one ofclauses 1 to 16, further comprising a temperature detection element,supported by the base material and electrically continuous with thewiring portion.

The invention claimed is:
 1. A semiconductor laser device comprising: asemiconductor laser element; a base material supporting thesemiconductor laser element; and a wiring portion formed on the basematerial and constituting a conduction path to the semiconductor laserelement, wherein the base material includes: a mounting face oriented toone side in a thickness direction of the base material, thesemiconductor laser element being mounted on the mounting face; and anemission part located on one side with respect to the semiconductorlaser element in a first direction perpendicular to the thicknessdirection, light from the semiconductor laser element is emitted outthrough the emission part, the base material includes an opening locatedon the one side in the thickness direction with respect to thesemiconductor laser element, the base material includes a mounting faceoriented in the thickness direction, the wiring portion includes amounting terminal section formed on the mounting face, the wiringportion includes an element mounting section formed on the mountingface, and the semiconductor laser element is mounted on the elementmounting section, the base material includes: a rear end face orientedto another side in the first direction and reaching the mounting face;and at least one rear groove recessed from the rear end face andreaching the mounting face, and the wiring portion includes at least onerear communicating portion formed on the rear groove and electricallyconnecting the semiconductor laser element and the mounting terminalsection to each other.
 2. The semiconductor laser device according toclaim 1, wherein the emission part is provided with a first cover thattransmits light from the semiconductor laser element.
 3. Thesemiconductor laser device according to claim 2, wherein the first coverincludes a lens portion that refracts the light from the semiconductorlaser element.
 4. The semiconductor laser device according to claim 1,further comprising a second cover that covers the opening.
 5. Thesemiconductor laser device according to claim 1, wherein the mountingface is oriented to the one side in the thickness direction.
 6. Thesemiconductor laser device according to claim 1, wherein the mountingface is oriented to another side in the thickness direction.
 7. Thesemiconductor laser device according to claim 6, wherein the basematerial includes: a bottom portion located on the another side in thethickness direction with respect to the mounting face; and a pedestalportion protruding from the bottom portion to the one side in thethickness direction and forming the mounting face.
 8. The semiconductorlaser device according to claim 7, wherein the base material includes aninner end face located on the another side in the first direction withrespect to the semiconductor laser element and inclined with respect tothe thickness direction.
 9. The semiconductor laser device according toclaim 7, further comprising a wire, wherein the wiring portion includesat least one wire bonding section that is located on the another side inthe first direction with respect to the semiconductor laser element andlocated on the one side in the thickness direction with respect to themounting face, and the wire is connected to the semiconductor laserelement and the wire bonding section.
 10. The semiconductor laser deviceaccording to claim 9, wherein the semiconductor laser element includes aplurality of waveguides aligned in a second direction perpendicular tothe first direction and the thickness direction, the waveguides beingcapable of emitting light independently of each other to the one side inthe first direction.
 11. The semiconductor laser device according toclaim 10, wherein the at least one rear groove includes a plurality ofrear grooves aligned in the second direction, the at least one wirebonding section includes a plurality of wire bonding sections aligned inthe second direction, the at least one rear communicating portionincludes a plurality of rear communicating portions formed in theplurality of rear grooves, respectively, the wiring portion includes aplurality of second strip sections each electrically connecting one ofthe plurality of wire bonding sections and one of the plurality of rearcommunicating portions to each other, and the plurality of second stripsections are aligned in the second direction and each extend in thefirst direction.
 12. The semiconductor laser device according to claim6, wherein the semiconductor laser element includes a semiconductorlayer having a light emitting function, and a submount supporting thesemiconductor layer.
 13. The semiconductor laser device according toclaim 1, further comprising a temperature detection element, supportedby the base material and electrically continuous with the wiringportion.